Protection layer on fin of fin field effect transistor (FinFET) device structure

ABSTRACT

A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 14/677,405, filed Apr. 2, 2015, issuing as U.S.Pat. No. 9,478,660, which claims the benefit of U.S. ProvisionalApplication No. 62/102,414, filed on Jan. 12, 2015, and entitled“PROTECTION LAYER ON FIN OF FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICESTRUCTURE”, their entirety of which are incorporated by referenceherein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer, andindividual dies on the wafer are singulated by sawing between theintegrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, or in other typesof packaging, for example.

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs, such as thefin field effect transistor (FinFET). FinFETs are fabricated with a thinvertical “fin” (or fin structure) extending from a substrate. Thechannel of the FinFET is formed in this vertical fin. A gate is providedover the fin. Advantages of the FinFET may include reducing the shortchannel effect and higher current flow.

Although existing FinFET devices and methods of fabricating FinFETdevices have been generally adequate for their intended purpose, theyhave not been entirely satisfactory in all aspects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1Q show cross-sectional representations of forming a fin fieldeffect transistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

FIG. 1G′ show a cross-sectional representation of a modification of FIG.1G, in accordance with some embodiments of the disclosure.

FIG. 2 shows an enlarged representation of a region A of FIG. 1I, inaccordance with some embodiments.

FIGS. 3A-3F show cross-sectional representations of forming a fin fieldeffect transistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

FIGS. 4A-4F show cross-sectional representations of forming a fin fieldeffect transistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

FIGS. 5A-5C show cross-sectional representations of a fin field effecttransistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

FIG. 6 show cross-sectional representations of a protection layer formedon the fin structures, in accordance with some embodiments of thedisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It is understood that additional operations canbe provided before, during, and after the method, and some of theoperations described can be replaced or eliminated for other embodimentsof the method.

Embodiments for forming a fin field effect transistor (FinFET) devicestructure are provided. FIG. 1A-1O show cross-sectional representationsof forming a fin field effect transistor (FinFET) device structure 100,in accordance with some embodiments of the disclosure.

The FinFET device structure 100 includes a substrate 102. The substrate102 may be made of silicon or other semiconductor materials.Alternatively or additionally, the substrate 102 may include otherelementary semiconductor materials such as germanium. In someembodiments, the substrate 102 is made of a compound semiconductor suchas silicon carbide, gallium arsenic, indium arsenide, or indiumphosphide. In some embodiments, the substrate 102 is made of an alloysemiconductor such as silicon germanium, silicon germanium carbide,gallium arsenic phosphide, or gallium indium phosphide. In someembodiments, the substrate 102 includes an epitaxial layer. For example,the substrate 102 has an epitaxial layer overlying a bulk semiconductor.

Afterwards, a dielectric layer 104 and a hard mask layer 106 are formedon the substrate 102, and a photoresist layer 108 is formed on the hardmask layer 106. The photoresist layer 108 is patterned by a patterningprocess. The patterning process includes a photolithography process andan etching process. The photolithography process includes photoresistcoating (e.g., spin-on coating), soft baking, mask aligning, exposure,post-exposure baking, developing the photoresist, rinsing and drying(e.g., hard baking). The etching process includes a dry etching processor a wet etching process

The dielectric layer 104 is a buffer layer between the substrate 102 andthe hard mask layer 106. In addition, the dielectric layer 104 is usedas a stop layer when the hard mask layer 106 is removed. The dielectriclayer 104 may be made of silicon oxide. The hard mask layer 106 may bemade of silicon oxide, silicon nitride, silicon oxynitride, or anotherapplicable material. In some other embodiments, more than one hard masklayer 106 is formed on the dielectric layer 104.

The dielectric layer 104 and the hard mask layer 106 are formed bydeposition processes, such as a chemical vapor deposition (CVD) process,high-density plasma chemical vapor deposition (HDPCVD) process, spin-onprocess, sputtering process, or another applicable process.

After the photoresist layer 108 is patterned, the dielectric layer 104and the hard mask layer 106 are patterned by using the patternedphotoresist layer 108 as a mask as shown in FIG. 1B, in accordance withsome embodiments. As a result, a patterned dielectric layer 104 and apatterned hard mask layer 106 are obtained. Afterwards, the patternedphotoresist layer 108 is removed.

Afterwards, an etching process is performed on the substrate 102 to forma fin structure 110 by using the patterned dielectric layer 104 and thepatterned hard mask layer 106 as a mask. The etching process may be adry etching process or a wet etching process. In some embodiments, thesubstrate 102 is etched by a dry etching process. The dry etchingprocess includes using the fluorine-based etchant gas, such as SF₆,C_(x)F_(y), NF₃ or combinations thereof. The etching process may be atime-controlled process, and continue until the fin structure 110reaches a predetermined height.

It should be noted that the number of fin structures 110 may be adjustedaccording to actual application, and it is not limited to one finstructure 110. In some other embodiments, the fin structure 110 has awidth that gradually increases from the top portion to the lowerportion.

Afterwards, a dielectric material 111 is formed on the fin structure 110as shown in FIG. 1C, in accordance with some embodiments. In someembodiments, the dielectric material 111 is made of silicon oxide,silicon nitride, silicon oxynitride, fluoride-doped silicate glass(FSG), or another low-k dielectric material. The dielectric material 111may be deposited by a chemical vapor deposition (CVD) process, aspin-on-glass process, or another applicable process.

Afterwards, the dielectric material 111 is thinned or planarized toexpose the top surface of the hard mask layer 106 as shown in FIG. 1D,in accordance with some embodiments. As a result, the top surface of thedielectric material 111 is level with the top surface of the hard masklayer 106. In some embodiments, the dielectric material 111 is thinnedby a chemical mechanical polishing (CMP) process.

After the dielectric material 111 is thinned, the hard mask layer 106and the dielectric layer 104 are removed to form a recess 107 as shownin FIG. 1E, in accordance with some embodiments. The hard mask layer 106and the dielectric layer 104 are respectively removed by an etchingprocess, such as a dry etching process or a wet etching process.

After the recess 107 is formed, a sacrificial layer 114 is formed in therecess 107 and on the dielectric material 111 as shown in FIG. 1F, inaccordance with some embodiments. The sacrificial layer 114 is used toprotect the top surface of the fin structure 110. The sacrificial layer114 may have a single layer or multiple layers. The sacrificial layer114 is made of silicon oxide, silicon nitride, silicon oxynitride orcombinations thereof.

After the sacrificial layer 114 is formed, an ion implant process 12 isoptionally performed on the top surface of the fin structure 110 asshown in FIG. 1G, in accordance with some embodiments. The ion implantprocess 12 is configured to dope the channel region with dopants, andthe channel region is formed below a gate structure (formed later). As aresult, as shown in FIG. 1G′, a doped region 115 in the fin structure110 is obtained. In some embodiments, doped regions 115 are doped withan n-type dopant, such as arsenic (As), phosphorous (P) or antimony(Sb). In some other embodiments, doped regions 115 are doped with ap-type dopant, such as boron (B) or boron fluorine (BF₂).

After the doped region is formed, the sacrificial layer 114 is removedas shown in FIG. 1H, in accordance with some embodiments. Afterwards, atop portion of the dielectric material 111 is removed to form anisolation structure 112. In some embodiments, the sacrificial layer 114is removed by an etching process. In some embodiments, the top portionof the dielectric material 111 is removed by an etching process. Theremaining isolation structure 112 is seen as a shallow trench isolation(STI) structure. The fin structure has a top portion 110 a and a bottomportion 110 b. The bottom portion 110 b is embedded in the isolationstructure 112. The top portion 110 a is exposed.

Afterwards, a protection layer 116 is conformally formed on the topportion 110 a of the fin structure 110 as shown in FIG. 1I, inaccordance with some embodiments. The protection layer 116 is formed bya deposition process 14. The protection layer 116 is used to protect thefin structure 110 from being damaged in the subsequent processes. Inaddition, the protection layer 116 is used to repair the defects and/orthe dangling bonds in the fin structure 110. The term “dangling bond”refers to a broken covalent bond. The dangling bonds are very unstable.

Before the protection layer 116 is formed on the fin structure 110, thefin structure 110 may be damaged by the above-mentioned process, whichmay be a dry etching process, a wet etching process, or a polishingprocess. Therefore, the surface of the fin structure 110 may have somedefects and/or dangling bonds. In some embodiments, the defects ordangling bonds may capture electrons, and therefore the mobility of theelectrons may be reduced. In some embodiments, the unwanted electronsare released from the dangling bonds, and therefore unwanted leakagecurrent is produced. In order to improve the performance of the FinFETdevice structure 100, the protection layer 116 is formed to repair thedefects and/or dangling bonds in the fin structure 110.

An interface is formed between the protection layer 116 and the topportion 110 a of the fin structure 110. It should be noted that theelectrons of the FinFET device structure 100 is transported along theinterface. If the roughness of the interface is too great, the electronsmay be captured by the rough surface. In order to improve the mobilityof the electrons, the roughness of the interface should be small. Insome embodiments, the interface between the protection layer 116 and thetop portion 110 a of the fin structure 110 has a roughness in a rangefrom about 0.1 nm to about 2.0 nm. The roughness is measured by ahigh-resolution Transmission Electron Microscopy (TEM). If the roughnessis too large, the electrons may be trapped by the rough surface, andtherefore the mobility of the device is decreased.

When the roughness is in above-mentioned range, the mobility of theelectrons is increased and the performance of the FinFET devicestructure 100 is improved.

The protection layer 116 is made of silicon-containing compound, such assilicon oxide (SiOx), silicon oxynitride (SiOxNy) or silicon oxycarbide(SiOC). As mentioned above, the protection layer 116 is formed by adeposition process 14. In some embodiments, the protection layer 116 isformed by a microwave plasma process, a thermal oxidation process, aplasma-enhanced chemical vapor deposition process (PECVD) process, oratomic layer deposition (ALD) process.

In some embodiments, the thermal oxidation process is used to form theprotection layer 116. In some embodiments, the thermal oxidation processis performed at a temperature in a range from about 700 degrees to about100 degrees.

In some embodiments, the atomic layer deposition (ALD) process is usedto form the protection layer 116. In some embodiments, the ALD processis performed at a temperature in a range from about 200 degrees to about900 degrees.

In some embodiments, the plasma-enhanced chemical vapor deposition(PECVD) process is used to form the protection layer 116. In someembodiments, the PECVD process is performed at a temperature in a rangefrom about 200 degrees to about 500 degrees. Compared with the ALDprocess and the thermal oxidation process, the PECVD process is operatedat a relatively low temperature.

In some embodiments, the microwave plasma process is used, and the“plasma” in the microwave plasma process has a gaslike state of matterconsisting of positively or negatively charged ions, free electrons, andneutral particles. The microwave plasma process is performed by usingoxygen gas (O₂), hydrogen (H₂) gas or another applicable gas. Theanother applicable gas may be nitrogen (N₂) gas, argon (Ar) gas, helium(He) gas, krypton (Kr) gas, xenon (Xe) gas or combinations thereof. Insome other embodiments, the oxygen-containing gas, such as water vapor(H₂O), nitrous oxide (NO), nitrous oxide (N₂O) or combinations thereof,is used in the microwave plasma process.

In some embodiments, the microwave plasma process is performed under apressure in a range from about 0.1 torr to about 10 torr. If thepressure is too high, the roughness of the interface between the topportion 110 a of the fin structure 110 and the protection layer 116 maybe too great. If the pressure is too low, the amount of excited ions isfew. The excited ions tend to collide with the surface of the finstructure 110, rather than colliding with each other. Therefore, the topportion 110 a of the fin structure 110 may be damaged when the pressureis too low. In addition, the growth rate of the protection layer 116 maybe too slow when the pressure is too low.

In some embodiments, the microwave plasma process is performed at atemperature in a range from about 400 degrees to about 600 degrees. Theoperation temperature of the microwave plasma process is lower than thatof the thermal oxidation process.

It should be noted that, while the microwave plasma process is beingperformed, a portion of the fin structure 110 is consumed and oxidizedto form the oxide layer. More specifically, the original surface of thefin structure 110 is destroyed and rebuilt by the excited ions. Theuneven surface of the fin structure 110 is removed and a new surface (orinterface) is grown. In addition, the dangling bonds which exist at theend of the surface of the fin structure are repaired by supplying thehydrogen (H₂) gas.

If an oxide layer is formed by a radio-frequency (RF) plasma process, anoxide material may be directly deposited on the original surface of thefin structure 110. As a result, the interface between the oxide layerand the fin structure 110 may not be repaired and still have an unevensurface.

FIG. 2 shows an enlarged representation of a region A of FIG. 1I, inaccordance with some embodiments. As shown in FIG. 2, the protectionlayer 116 has a thickness T₁. In some embodiments, the thickness T₁ isin a range from about 1 angstrom (A) to about 10 angstrom (A). If thethickness is too great, a pitch P (shown in FIG. 6) between two adjacentfin structures 110 is reduced. Therefore, the critical dimension (CD) isreduced. If the thickness is too small, the protective effect may notgood enough to prevent the fin structure 110 from being damaged by thesubsequent processes.

As shown in FIG. 2, the fin structure 110 has a fin width D₁ and a finheight H₁ (shown in FIG. 1I). The fin height H₁ is defined by a distancefrom a bottom surface of the top portion 110 a to a top surface of thetop portion 110 a. The bottom surface is substantially level with thetop surface of the isolation structure 112. The top portion 110 a andthe bottom portion 110 b are used to define the position of theprotection layer 116, and there is no obvious interface between the topportion 110 a and the bottom portion 110 b. In some embodiments, the finheight H₁ is in a range from about 20 nm to about 60 nm. In someembodiments, the fin width D₁ is in a range from about 5 nm to about 20nm.

After the protection layer 116 is formed, a dummy gate dielectric layer208 and a dummy gate electrode 210 are formed on the isolation structure112 and the protection layer 116 as shown in FIG. 1J, in accordance withsome embodiments. In some embodiments, the dummy gate dielectric layer208 is made of dielectric materials, such as silicon oxide, siliconnitride, silicon oxynitride, dielectric material(s) with high dielectricconstant (high-k), or combinations thereof. The dummy gate dielectriclayer 208 is formed by a deposition process, such as chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD(MOCVD), or plasma enhanced CVD (PECVD).

In some embodiments, the dummy gate electrode layer 210 is made ofconductive or non-conductive materials. In some embodiments, the dummygate electrode layer 210 is made of polysilicon. The dummy gateelectrode layer 210 is formed by a deposition process, such as chemicalvapor deposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD(MOCVD), or plasma enhanced CVD (PECVD).

After the dummy gate electrode layer 210 is formed, a hard mask layer118 is formed and on the dummy gate electrode layer 210. The hard masklayer 118 is patterned to form a patterned hard mask layer 118. Thepatterned hard mask layer 118 is used for protecting the underlyinglayers from being etched during the subsequent processes.

After the patterned hard mask layer 118 is formed, a portion of thedummy gate dielectric layer 208 and the dummy gate electrode layer 210are removed to form a dummy gate structure 220 as shown in FIG. 1H, inaccordance with some embodiments. The dummy gate structure 220 includesthe portions of the dummy gate dielectric layer 208 and the dummy gateelectrode layer 210 positioned below the patterned hard mask layer 118.The top portion 110 a of the fin structure 110 is covered by theprotection layer 116. More specifically, the protection layer 116 isformed between the top portion 110 a of the fin structure 110 and thedummy gate dielectric layer 208.

In the middle portion of the fin structure 110, the protection layer 116is formed between the dummy gate structure 220 and the fin structure110. The portions of the dummy gate dielectric layer 114 and the dummygate electrode layer 116 are removed by an etching process, such as awet etching process or a dry etching process.

After the dummy gate structure 220 is formed, spacers 122 are formed onthe opposite sidewalls of the dummy gate structure 120 as shown in FIG.1L, in accordance with some embodiments. In some embodiments, spacers122 are made of silicon nitride, silicon carbide, silicon oxynitride,silicon carbon, silicon oxide, silicon hydrogen, another applicablematerial, or a combination thereof. In some embodiments, a spacermaterial layer is deposited over the substrate 102 and the dummy gatestructure 220. Afterwards, an anisotropic etching process is performedto partially remove the spacer material layer. As a result, theremaining portions of the spacer material layer form the spacers 122.

Afterwards, the source/drain (S/D) structures 130 are formed on the finstructure 110 as shown in FIG. 1M, in accordance with some embodiments.In some embodiments, the source/drain structures 130 are strainedsource/drain structures. In some embodiments, the source/drainstructures 130 include silicon germanium (SiGe), germanium (Ge), indiumarsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide(InSb), gallium arsenide (GaAs), gallium antimonide (GaSb), indiumaluminum phosphide (InAlP), indium phosphide (InP), or a combinationthereof.

In some embodiments, the source/drain (S/D) structures 130 are formed bygrowing a strained material on the fin structure 110 by an epitaxial(epi) process. In addition, the lattice constant of the strainedmaterial may be different from the lattice constant of the substrate102. The epitaxial process may include a selective epitaxy growth (SEG)process, CVD deposition techniques (e.g., vapor-phase epitaxy (VPE)and/or ultra-high vacuum CVD (UHV-CVD)), molecular beam epitaxy, orother suitable epi processes.

It should be noted that the protection layer 116 is formed between theS/D structures 130 and the top portion 110 a of the fin structure 110.The fin structure 110 is protected by the protection layer 116 frombeing damaged by the following processes. In addition, the interfacewhich is formed between the top portion 110 a of the fin structure 110and the protection layer 116 has a roughness smaller than 2 nm. Itshould be noted that the electrons are transported along the interface.The mobility of electrons is improved by the smooth interface. Once themobility of electrons is increased, the performance of the FinFET devicestructure is improved.

Afterwards, an inter-layer dielectric (ILD) material 131 is formed overthe S/D structures 130 over the substrate 102 as shown in FIG. 1N, inaccordance with some embodiments. In some embodiments, an inter-layerdielectric (ILD) material 131 is formed over the isolation structure 112and the dummy gate structure 220.

The inter-layer dielectric (ILD) material may include multilayers madeof multiple dielectric materials, such as silicon oxide, siliconnitride, silicon oxynitride, tetraethoxysilane (TEOS), phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), low-k dielectricmaterial, and/or other applicable dielectric materials. Examples oflow-k dielectric materials include, but are not limited to, fluorinatedsilica glass (FSG), carbon doped silicon oxide, amorphous fluorinatedcarbon, parylene, bis-benzocyclobutenes (BCB), or polyimide. Theinter-layer dielectric (ILD) material may be formed by chemical vapordeposition (CVD), physical vapor deposition, (PVD), atomic layerdeposition (ALD), spin-on coating, or other applicable processes.

It should be noted that a portion of the protection layer 116 is formedbetween the ILD structure 132 and the fin structure 110. In someembodiments, a contact etch stop layer (CESL) (not shown) is formedbefore the ILD material 131 is formed.

Afterwards, a polishing process is performed to the ILD material 131, asshown in FIG. 1O, in accordance with some embodiments. In someembodiments, the ILD material 131 is planarized by a chemical mechanicalpolishing (CMP) process until the top surface of dummy gate structure220 is exposed. As a result, an ILD structure 132 is formed.

After the ILD structure 132 is formed, the dummy gate structure 220 isremoved to form a trench 133 in the ILD structure 132 as shown in FIG.1P, in accordance with some embodiments. The dummy gate structure 220 isremoved by performing a first etching process and a second etchingprocess. The dummy gate electrode layer 208 is removed by the firstetching process, and the dummy gate dielectric layer 210 is removed bythe second etching process. In some embodiments, the first etchingprocess is a dry etching process and the second etching process is a wetetching process. In some embodiments, the dry etching process includesusing an etching gas, such as CF₄, Ar, NF₃, Cl₂, He, HBr, O₂, N₂, CH₃F,CH₄, CH₂F₂, or a combination thereof.

It should be noted that the protection layer 116 is not removed when thedummy gate structure 220 is removed. The protection layer 116 is exposedwhen the trench 133 is formed.

After the trench 133 is formed, a gate dielectric layer 140 and a gateelectrode layer 142 are filled into the trench 133 as shown in FIG. 1Q,in accordance with some embodiments. Therefore, a gate structure 144including the gate dielectric layer 140 and the gate electrode layer 142is obtained.

In some embodiments, the gate dielectric layer 140 is made of a high-kdielectric material. The high-k dielectric material may include hafniumoxide, zirconium oxide, aluminum oxide, hafnium dioxide-alumina alloy,hafnium silicon oxide, hafnium silicon oxynitride, hafnium tantalumoxide, hafnium titanium oxide, hafnium zirconium oxide, or the like.

In some embodiments, the gate electrode layer 142 is made of a metalmaterial. The metal material may include N-work-function metal orP-work-function metal. The N-work-function metal includes tungsten (W),copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titaniumaluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalumcarbide (TaC), tantalum carbon nitride (TaCN), tantalum silicon nitride(TaSiN), manganese (Mn), zirconium (Zr) or combinations thereof. TheP-work-function metal includes titanium nitride (TiN), tungsten nitride(WN), tantalum nitride (TaN), ruthenium (Ru) or combinations thereof.

As shown in FIG. 1Q, the gate structure 144 is transversely overlying amiddle portion of the fin structure 110. A channel region is formedbelow the gate structure 144, and the channel region is wrapped by thegate structure 144. Since the protection layer 116 is exposed when thetrench 133 is formed, the protection layer 116 is formed between thegate dielectric layer 140 and the fin structure 110. In other words, thegate dielectric layer 140 directly contacts with the protection layer116, rather than the fin structure 110.

FIGS. 3A-3F show cross-sectional representations of forming a fin fieldeffect transistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

As shown in FIG. 3A, spacers 122 are formed on the opposite sidewalls ofthe dummy gate structure 120. The structure of FIG. 3A is similar toFIG. 1L.

After forming the spacers 122, the exposed protection layer 116 formedon the top portion 110 a of the fin structure 110 are removed by anetching process as shown in FIG. 3B, in accordance with some embodimentsof the disclosure. It should be noted that a portion of the protectionlayer 116 covered by the dummy gate structure 220 is still formed on thetop portion 110 a of the fin structure 110.

After the exposed protection layer 116 is removed, the source/drain(S/D) structures 130 are formed on the fin structure 110 as shown inFIG. 3C, in accordance with some embodiments.

After the S/D structures 130 are formed on the fin structure 110, theinter-layer dielectric (ILD) material (not shown) is formed over the S/Dstructures 130 over the substrate 102.

Afterwards, the ILD material is planarized until to expose a top surfaceof the dummy gate structure 220 as shown in FIG. 3D, in accordance withsome embodiments. Therefore, the ILD structure 132 is formed.

After the ILD structure 132 is formed, the dummy gate structure 220 isremoved to form the trench 133 in the ILD structure 132 as shown in FIG.3E, in accordance with some embodiments.

After the dummy gate structure 220 is removed, the gate dielectric layer140 and the gate electrode layer 142 are filled into the trench 133 asshown in FIG. 3F, in accordance with some embodiments. Therefore, thegate structure 144 including the gate dielectric layer 140 and the gateelectrode layer 142 is obtained.

Compared with FIG. 1Q and FIG. 3F, the protection layer 116 underlyingthe S/D structures 130 are still remained on the fin structure 110 inFIG. 1O, but it is removed in FIG. 3F. The advantage of FIG. 3F is thatthe S/D structures 130 are easier grown on the fin structure 110 than itgrown on the protection layer 116.

It should be noted that the remaining protection layer 116 is formedbetween the middle portion of the fin structure 110 and the gatedielectric layer 140. The protection layer 116 is used to repair thedefects and/or the dangling bonds in the top portion 110 a of the finstructure 110. In addition, the channel portion below the gatedielectric layer 140 is wrapped by the protection layer 116.

FIGS. 4A-4F show cross-sectional representations of forming a fin fieldeffect transistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

As shown in FIG. 4A, spacers 122 are formed on the opposite sidewalls ofthe dummy gate structure 120.

After the spacers 122 are formed, the exposed protection layer which isnot covered by the dummy gate structure 220 and a portion of the finstructure 110 are removed to form a recess 111. The recess 111 is formedby using an etching process. The top surface of the recess 111 is lowerthan the top surface of the isolation structure 112. The recess 111 hasa bottom surface and sidewalls. The bottom surface of the recess 111 isthe fin structure 110, and the sidewalls of the recess 111 are theisolation structure 112.

Afterwards, source/drain (S/D) structures 130 are formed in the recesses111, as shown in FIG. 4C, in accordance with some embodiments. The S/Dstructures 130 extend from the recess 111 to above the isolationstructure 112.

In some embodiments, S/D structures 130 are strained S/D structures. Insome embodiments, the S/D structures 130 are formed by growing astrained material in recesses 124 of fin structure 110 by an epitaxial(epi) process. In addition, the lattice constant of the strainedmaterial may be different from the lattice constant of substrate 102.

In some embodiments, after S/D structures 130 are formed, a contact etchstop layer (CESL) (not shown) is formed to cover dummy gate structure220 over the substrate 102. In some embodiments, the contact etch stoplayer is made of silicon nitride, silicon oxynitride, and/or otherapplicable materials. The contact etch stop layer may be formed byplasma enhanced CVD, low pressure CVD, ALD, or other applicableprocesses.

After the S/D structures 130 are formed, the ILD structure 132 is formedover the S/D structures 130 and the isolation structure 112 as shown inFIG. 4D, in accordance with some embodiments.

After the ILD structure 132 is formed, the dummy gate structure 220 isremoved to form the trench 133 in the ILD structure 132 as shown in FIG.4E, in accordance with some embodiments. It should be noted that theprotection layer 116 over the middle portion of the fin structure 110are remained and exposed.

After the dummy gate structure 220 is removed, the gate dielectric layer140 and the gate electrode layer 142 are filled into the trench 133 asshown in FIG. 4F, in accordance with some embodiments. Therefore, thegate structure 144 including the gate dielectric layer 140 and the gateelectrode layer 142 is obtained.

Compared with FIG. 3F and FIG. 4F, the S/D structures 130 are directlyformed on the top portion 110 a of the fin structure 110 in FIG. 3F, butin FIG. 4F, the S/D structures 130 are formed in the recess 111 which isconstructed by the isolation structure 112 and the bottom portion 110 bof the fin structure 110.

FIGS. 5A-5C show cross-sectional representations of a fin field effecttransistor (FinFET) device structure, in accordance with someembodiments of the disclosure.

FIG. 5A is a modification embodiment of FIG. 1Q. As shown in FIG. 5A,the gate structure 144 is constructed by the gate dielectric layer 140,the work function layer 141 and the gate electrode layer 142. The workfunction layer 141 is between the gate dielectric layer 140 and the gateelectrode layer 142.

The work function metal layer may be tuned to have a proper workfunction. For example, if a P-type work function metal (P-metal) for aPMOS device is desired, P-type work function materials may be used.Examples of P-type work function materials include, but are not limitedto, titanium nitride (TiN), tungsten nitride (WN), tungsten (W),ruthenium (Ru), palladium (Pd), platinum (Pt), cobalt (Co), nickel (Ni),conductive metal oxides, and/or other applicable materials.

On the other hand, if an N-type work function metal (N-metal) for NMOSdevices is desired, N-type metal materials may be used. Examples ofN-type work function materials include, but are not limited to, titaniumaluminide (TiAl), titanium aluminium nitride (TiAlN), carbo-nitridetantalum (TaCN), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum(Ta), aluminum (Al), metal carbides (e.g., hafnium carbide (HfC),zirconium carbide (ZrC), titanium carbide (TiC), aluminum carbide(AlC)), aluminides, and/or other applicable materials.

FIG. 5B is a modification embodiment of FIG. 3F. As shown in FIG. 5B,the work function layer 141 is between the gate dielectric layer 140 andthe gate electrode layer 142, and the protection layer 116 underlyingthe S/D structure 130 are removed to facilitate the growth of the S/Dstructure 130.

FIG. 5C is a modification embodiment of FIG. 4F. As shown in FIG. 5C,the work function layer 141 is positioned between the gate dielectriclayer 140 and the gate electrode layer 142.

FIG. 6 show cross-sectional representations of a protection layer formedon the fin structures, in accordance with some embodiments of thedisclosure. A number of fin structures 110 are parallel to each other.

The number of the fin structures 110 is not limited to three, it can beadjusted according to actual application. A pitch P is defined betweentwo adjacent fin structures 110. It should be noted that as mentionedabove, if the thickness of the protection layer 116 is too great, thepitch P between two adjacent fin structures 110 is reduced. Therefore,the critical dimension (CD) is affected.

Embodiments for forming a fin field effect transistor (FinFET) devicestructure are provided. A fin structure is formed on a substrate, and anisolation structure is formed on the substrate. The fin structure has atop portion and a bottom portion, and the bottom portion of the finstructure is embedded in the fin structure. A protection layer isconformally formed on the top portion of the fin structure. Theprotection layer is used to protect the fin structure from being damagedby the fabrication processes and to repair the interface between the finstructure and the protection layer. The roughness of the interface isimproved by forming the protection layer. Therefore, the performance ofthe FinFET device structure is improved.

In some embodiments, a fin field effect transistor (FinFET) devicestructure is provided. The FinFET device structure includes a substrateand a fin structure extending from the substrate. The FinFET devicestructure also includes an isolation structure formed on the substrate.The fin structure has a top portion and a bottom portion, and the bottomportion is embedded in the isolation structure. The FinFET devicestructure further includes a protection layer formed on the top portionof the fin structure. An interface is between the protection layer andthe top portion of the fin structure, and the interface has a roughnessin a range from about 0.1 nm to about 2.0 nm.

In some embodiments, a fin field effect transistor (FinFET) devicestructure is provided. The FinFET device structure includes a substrateand a fin structure formed on the substrate. The FinFET device structurealso includes a gate structure formed on a middle portion of the finstructure. The gate structure comprises a high-k dielectric layer and ametal gate electrode layer formed on the high-k dielectric layer. TheFinFET device structure further includes a protection layer formedbetween the fin structure and the high-k dielectric layer.

In some embodiments, a method for forming a fin field effect transistor(FinFET) device structure is provided. The method includes providing asubstrate and forming a fin structure on the substrate. The method alsoincludes forming an isolation structure on the substrate. The finstructure has a top portion and a bottom portion, the bottom portion isembedded in the isolation structure. The method includes forming aprotection layer on the top portion of the fin structure. An interfaceis between the protection layer and the top portion of the finstructure, and the interface has a roughness in a range from about 0.1nm to about 2.0 nm.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A fin field effect transistor (FinFET) devicestructure, comprising: a substrate; a fin structure extending from thesubstrate; a protection layer formed on a top portion of the finstructure, wherein the protection layer includes silicon oxide, siliconoxynitride, silicon oxycarbide (SiOC) or combinations thereof; asource/drain (S/D) structure formed on and in direct contact with aportion of the protection layer, wherein a top surface of the S/Dstructure is higher than a top surface of the protection layer; and agate structure formed on a central portion of the fin structure, whereinthe protection layer is formed between the fin structure and the gatestructure and wherein the central portion of the fin structurecorresponds to a channel region, and the channel region is wrapped bythe protection layer.
 2. The fin field effect transistor (FinFET) devicestructure as claimed in claim 1, wherein the protection layer is between1 and ten angstroms (Å).
 3. The fin field effect transistor (FinFET)device structure as claimed in claim 1, further comprising: an isolationstructure formed on the substrate, wherein the fin structure has the topportion and a bottom portion, the bottom portion is embedded in theisolation structure; and wherein an interface is between the protectionlayer and the top portion of the fin structure, and the interface has aroughness in a range from about 0.1 nm to about 2.0 nm.
 4. The fin fieldeffect transistor (FinFET) device structure as claimed in claim 3,further comprising: an inter-layer dielectric (ILD) structure formed onthe isolation structure, wherein a portion of the protection layer isformed between the ILD structure and the fin structure.
 5. The fin fieldeffect transistor (FinFET) device structure as claimed in claim 1,wherein the source/drain (S/D) structure is adjacent to the gatestructure, and wherein the protection layer is formed between the S/Dstructure and the fin structure.
 6. The fin field effect transistor(FinFET) device structure as claimed in claim 5, wherein the S/Dstructure comprises silicon germanium (SiGe), germanium (Ge), indiumarsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide(InSb), gallium arsenide (GaAs), gallium antimonide (GaSb), indiumaluminum phosphide (InAlP), indium phosphide (InP), or a combinationthereof.
 7. A fin field effect transistor (FinFET) device structure,comprising: a substrate; a fin structure formed on the substrate,wherein the fin structure includes a top fin surface and opposing finsidewall surfaces; a gate structure formed on a middle portion of thefin structure, wherein the gate structure comprises a high-k dielectriclayer and a metal gate electrode layer formed on the high-k dielectriclayer and wherein the middle portion of the fin structure is a channelregion; a protection layer formed between the fin structure and thehigh-k dielectric layer, wherein the protection layer is in contact withboth the top fin surface in the channel region of the fin structure andthe opposing fin sidewall surfaces in the channel region of the finstructure; and an inter-layer dielectric (ILD) structure formed on thefin structure, wherein a portion of the protection layer is formedbetween the ILD structure and the fin structure.
 8. The fin field effecttransistor (FinFET) device structure as claimed in claim 7, wherein aninterface is between the protection layer and the fin structure, and theinterface has a roughness in a range from about 0.1 nm to about 2.0 nm.9. The fin field effect transistor (FinFET) device structure as claimedin claim 7, wherein the inter-layer dielectric (ILD) structure extendsto a top surface of the gate structure.
 10. The fin field effecttransistor (FinFET) device structure as claimed in claim 7, furthercomprising: a source/drain (S/D) structure formed on and in directcontact with a portion of the protection layer, wherein a top surface ofthe S/D structure is higher than a top surface of the protection layer.11. The fin field effect transistor (FinFET) device structure as claimedin claim 10, wherein the source/drain (S/D) structure is adjacent to thegate structure, and wherein the protection layer is formed between theS/D structure and the fin structure.
 12. A method for forming a finfield effect transistor (FinFET) device structure, comprising: providinga substrate; forming a fin structure on the substrate; forming aprotection layer using a microwave plasma process to form the protectionlayer on a top portion of the fin structure, wherein the forming theprotection layer includes depositing the protection layer including anoxide; and forming a source/drain (S/D) structure on and in directcontact with a portion of the protection layer, wherein a top surface ofthe S/D structure is higher than a top surface of the protection layer.13. The method for forming the fin field effect transistor (FinFET)device structure as claimed in claim 12, wherein defects or danglingbonds in the top portion of the fin structure are repaired by themicrowave plasma process.
 14. The method for forming the fin fieldeffect transistor (FinFET) device structure as claimed in claim 12,wherein the microwave plasma process is performed by using oxygen gas(O₂), hydrogen (H₂) gas or combinations thereof.
 15. The method forforming the fin field effect transistor (FinFET) device structure asclaimed in claim 12, wherein the microwave plasma process is performedunder a pressure in a range from about 0.1 torr to about 10 torr. 16.The method for forming the fin field effect transistor (FinFET) devicestructure as claimed in claim 12, further comprising: forming anisolation structure on the substrate, wherein the fin structure has thetop portion and a bottom portion, and wherein the bottom portion isembedded in the isolation structure; and wherein an interface is betweenthe protection layer and the top portion of the fin structure, and theinterface has a roughness in a range from about 0.1 nm to about 2.0 nm.17. The method for forming the fin field effect transistor (FinFET)device structure as claimed in claim 16, further comprising: beforeforming the isolation structure on the substrate, forming a dielectriclayer on the fin structure and the substrate; forming a sacrificiallayer on the fin structure and the dielectric layer; doping the finstructure; removing the sacrificial layer; and removing a top portion ofthe dielectric layer to expose the top portion of the fin structure.